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Document Number: 94364
2 Revision: 29-Apr-08
GA200SA60UP
Vishay High Power Products
Insulated Gate Bipolar Transistor
(Ultrafast Speed IGBT), 100 A
ELECTRICAL SPECIFICATIONS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Collector to emitter breakdown voltage V
(BR)CES
V
GE
= 0 V, I
C
= 250 µA 600 - -
V
Emitter to collector breakdown voltage V
(BR)ECS
V
GE
= 0 V, I
C
= 1.0 A
Pulse width ≤ 80 µs; duty factor ≤ 0.1 %
18 - -
Temperature coeff. of breakdown voltage ΔV
(BR)CES
/ΔT
J
V
GE
= 0 V, I
C
= 10 mA - 0.38 - V/°C
Collector to emitter saturation voltage V
CE(on)
I
C
= 100 A
V
GE
= 15 V
See fig. 2, 5
- 1.60 1.9
V
I
C
= 200 A - 1.92 -
I
C
= 100 A, T
J
= 150 °C - 1.54 -
Gate threshold voltage V
GE(th)
V
CE
= V
GE
, I
C
= 250 µA 3.0 - 6.0
Temperature coeff. of threshold voltage ΔV
GE(th)
/ΔT
J
V
CE
= V
GE
, I
C
= 2.0 mA - - 11 - mV/°C
Forward transconductance g
fe
V
CE
= 100 V, I
C
= 100 A
Pulse width 5.0 µs, single shot
79 - - S
Zero gate voltage collector current I
CES
V
GE
= 0 V, V
CE
= 600 V - - 1.0
mA
V
GE
= 0 V, V
CE
= 600 V, T
J
= 150 °C - - 10
Gate to emitter leakage current I
GES
V
GE
= ± 20 V - - ± 250 nA
SWITCHING CHARACTERISTICS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Total gate charge (turn-on) Q
g
I
C
= 100 A
V
CC
= 400 V
V
GE
= 15 V; See fig. 8
- 770 1200
nCGate-emitter charge (turn-on) Q
ge
- 100 150
Gate-collector charge (turn-on) Q
gc
- 260 380
Turn-on delay time t
d(on)
T
J
= 25 °C
I
C
= 100 A
V
CC
= 480 V
V
GE
= 15 V
R
G
= 2.0 Ω
Energy losses include “tail”
See fig. 9, 10, 14
-54-
ns
Rise time t
r
-79-
Turn-off delay time t
d(off)
- 130 200
Fall time t
f
- 300 450
Turn-on switching loss E
on
-0.98-
mJTurn-off switching loss E
off
-3.48-
Total switching loss E
ts
- 4.46 7.6
Turn-on delay time t
d(on)
T
J
= 150 °C
I
C
= 100 A, V
CC
= 480 V
V
GE
= 15 V, R
G
= 2.0 Ω
Energy losses include “tail”
See fig. 10, 11, 14
-56-
ns
Rise time t
r
-75-
Turn-off delay time t
d(off)
-160-
Fall time t
f
-460-
Total switching loss E
ts
-7.24- mJ
Internal emitter inductance L
E
Measured 5 mm from package - 5.0 - nH
Input capacitance C
ies
V
GE
= 0 V
V
CC
= 30 V
ƒ = 1.0 MHz; See fig. 7
- 16 500 -
pFOutput capacitance C
oes
- 1000 -
Reverse transfer capacitance C
res
-200-
(7 paginas)
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